| Part Number: | EPC2104ENG |
| Product Name: | EPC2104ENG Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | EPC2104ENG |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | EPC |
| Description: | TRANS GAN 2N-CH 100V BUMPED DIE |
| Series: | eGaN |
| Packaging: | Tray |
| FET Type: | 2 N-Channel (Half Bridge) |
| FET Feature: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100V |
| Current - Continuous Drain (Id) @ 25°C: | 23A |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 5.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
| Power - Max: | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | Die |
| Supplier Device Package: | Die |
Part Number
Brand
D/C
Qty
EPC2104ENG EPC
EPC
8000
USD 0
EPC2104ENG EPC 21+
EPC
21+
81630
USD 0
EPC2104ENG EPC
EPC
0
USD 0
EPC2104ENGRT EPC
EPC
6496
USD 0
EPC2104ENGRT EPC 24/23+
EPC
24/23+
109
USD 0
EPC2104ENG EPC
EPC
8000
USD 0
EPC2104ENG EPC 21+
EPC
21+
81630
USD 0
EPC2104ENG EPC
EPC
0
USD 0
EPC2104ENGRT EPC
EPC
6496
USD 0
EPC2104ENGRT EPC 24/23+
EPC
24/23+
109
USD 0
Contact Us
Copyright © 2025 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
