| Part Number: | EPC2029ENGRT |
| Product Name: | EPC2029ENGRT Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | EPC2029ENGRT |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | EPC |
| Description: | TRANS GAN 80V 31A BUMPED DIE |
| Series: | eGaN |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 80V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2.5V @ 12mA |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 40V |
| Vgs (Max): | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 30A, 5V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
Part Number
Brand
D/C
Qty
EPC2029ENGRT EPC
EPC
18000
USD 0
EPC2029ENGRT EPC
EPC
0
USD 0
EPC2029ENGRT EPC
EPC
9
USD 0
EPC2029ENGRT EPC
EPC
18000
USD 0
EPC2029ENGRT EPC
EPC
0
USD 0
EPC2029ENGRT EPC
EPC
9
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
