Part Number: | EPC2022 |
Product Name: | EPC2022 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | EPC2022 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | EPC |
Description: | TRANS GAN 100V 3MOHM BUMPED DIE |
Series: | eGaN |
Packaging: | Tape & Reel (TR) |
FET Type: | N-Channel |
Technology: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 12mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 50V |
Vgs (Max): | +6V, -4V |
FET Feature: | - |
Power Dissipation (Max): | - |
Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 25A, 5V |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
Part Number
Brand
D/C
Qty
EPC2022 EPC
EPC
3500
USD 0
EPC2022 24-TFLGA Exposed Pad
24-TFLGA Exposed Pad
287
USD 0
EPC2022 EPC 2020+
EPC
2020+
5000
USD 0
EPC2022 EPC 15+
EPC
15+
1000
USD 0
EPC2022 EPC 21+
EPC
21+
150
USD 0
EPC2022 EPC
EPC
3500
USD 0
EPC2022 24-TFLGA Exposed Pad
24-TFLGA Exposed Pad
287
USD 0
EPC2022 EPC 2020+
EPC
2020+
5000
USD 0
EPC2022 EPC 15+
EPC
15+
1000
USD 0
EPC2022 EPC 21+
EPC
21+
150
USD 0