| Part Number: | EPC2019 |
| Product Name: | EPC2019 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | EPC2019 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | EPC |
| Description: | TRANS GAN 200V 8.5A BUMPED DIE |
| Series: | eGaN |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 8.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 100V |
| Vgs (Max): | +6V, -4V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 7A, 5V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die |
| Package / Case: | Die |
Part Number
Brand
D/C
Qty
EPC2019 EPC 2022
EPC
2022
11577
USD 0
EPC2019 EPC 22+
EPC
22+
12327
USD 0
EPC2019
5000
USD 0
EPC2019 EPC 2022
EPC
2022
11577
USD 0
EPC2019 EPC 22+
EPC
22+
12327
USD 0
EPC2019
5000
USD 0
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