| Part Number: | CSD85312Q3E |
| Product Name: | CSD85312Q3E Transistors - FETs, MOSFETs - Arrays |
| Merchant-Specific Identifier: | CSD85312Q3E |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
| Brand: | <a href='https://texas_instruments.hkinventory.com/' target='_blank'>Texas Instruments</a> |
| Description: | MOSFET 2N-CH 20V 39A 8VSON |
| Series: | NexFET |
| Packaging: | 2 N-Channel (Dual) Common Source |
| FET Type: | Cut Tape (CT) |
| FET Feature: | Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 39A |
| Rds On (Max) @ Id, Vgs: | 12.4 mOhm @ 10A, 8V |
| Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 15.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2390pF @ 10V |
| Power - Max: | 2.5W |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-VSON (3.3x3.3) |
Part Number
Brand
D/C
Qty
CSD85312Q3E TI 22+
TI
22+
5000
USD 0
CSD85312Q3E TI 19
TI
19
12989
USD 0
CSD85312Q3E TI 22+
TI
22+
3056
USD 0
CSD85312Q3E TI 23+
TI
23+
27000
USD 0
CSD85312Q3E TI 22+
TI
22+
5000
USD 0
CSD85312Q3E TI 19
TI
19
12989
USD 0
CSD85312Q3E TI 22+
TI
22+
3056
USD 0
CSD85312Q3E TI 23+
TI
23+
27000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
