| Part Number: | CSD25213W10 |
| Product Name: | CSD25213W10 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | CSD25213W10 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | <a href='https://texas_instruments.hkinventory.com/' target='_blank'>Texas Instruments</a> |
| Description: | MOSFET P-CH 20V 1.6A 4DSBGA |
| Series: | NexFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 478pF @ 10V |
| Vgs (Max): | -6V |
| FET Feature: | - |
| Power Dissipation (Max): | 1W (Ta) |
| Rds On (Max) @ Id, Vgs: | 47 mOhm @ 1A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 4-DSBGA (1x1) |
| Package / Case: | 4-UFBGA, DSBGA |
Part Number
Brand
D/C
Qty
CSD25213W10 TI 22+
TI
22+
6000
USD 0
CSD25213W10 TI 23+
TI
23+
12500
USD 0
CSD25213W10 TI 22+
TI
22+
5000
USD 0
CSD25213W10 adi 23+
adi
23+
5000
USD 0
CSD25213W10 TI 22+
TI
22+
6000
USD 0
CSD25213W10 TI 23+
TI
23+
12500
USD 0
CSD25213W10 TI 22+
TI
22+
5000
USD 0
CSD25213W10 adi 23+
adi
23+
5000
USD 0
Contact Us
Copyright © 2024 Hong Kong Inventory Limited. All Rights Reserved.Designated trademarks and brands are the property of their respective owners.
Use of this Website constitutes acceptance of Hong Kong Inventory Limited Terms of Use and Privacy Policy
