| Part Number: | CSD25211W1015 |
| Product Name: | CSD25211W1015 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | CSD25211W1015 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | <a href='https://texas_instruments.hkinventory.com/' target='_blank'>Texas Instruments</a> |
| Description: | MOSFET P-CH 20V 3.2A 6DSBGA |
| Series: | NexFET |
| Packaging: | Cut Tape (CT) |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 4.1nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 10V |
| Vgs (Max): | -6V |
| FET Feature: | - |
| Power Dissipation (Max): | 1W (Ta) |
| Rds On (Max) @ Id, Vgs: | 33 mOhm @ 1.5A, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 6-DSBGA (1x1.5) |
| Package / Case: | 6-UFBGA, DSBGA |
Part Number
Brand
D/C
Qty
CSD25211W1015 TI 22+
TI
22+
18508
USD 0
CSD25211W1015
TI
TI
21508
USD 0
CSD25211W1015 Texas Instruments 1948
Texas Instruments
1948
18658
USD 0
CSD25211W1015 TEXAS INSTRUMENTSTI
TEXAS INSTRUMENTSTI
10001
USD 0
CSD25211W1015 TI 22+
TI
22+
18508
USD 0
CSD25211W1015
TI
TI
21508
USD 0
CSD25211W1015 Texas Instruments 1948
Texas Instruments
1948
18658
USD 0
CSD25211W1015 TEXAS INSTRUMENTSTI
TEXAS INSTRUMENTSTI
10001
USD 0
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