| Part Number: | CSD23202W10 |
| Product Name: | CSD23202W10 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | CSD23202W10 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | <a href='https://texas_instruments.hkinventory.com/' target='_blank'>Texas Instruments</a> |
| Description: | MOSFET P-CH 12V 2.2A 4DSBGA |
| Series: | NexFET |
| Packaging: | |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 3.8nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 512pF @ 6V |
| Vgs (Max): | -6V |
| FET Feature: | - |
| Power Dissipation (Max): | 1W (Ta) |
| Rds On (Max) @ Id, Vgs: | 53 mOhm @ 500mA, 4.5V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 4-DSBGA (1x1) |
| Package / Case: | 4-UFBGA, DSBGA |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
CSD23202W10 TI 1750+ 0
TI
1750+
6000
USD 0
Part Number
Brand
D/C
Qty
CSD23202W10 TI
TI
6000
USD 0
CSD23202W10 TI
TI
180
USD 0
CSD23202W10 TI 2149+
TI
2149+
40000
USD 0
CSD23202W10 Texas Instruments 19+
Texas Instruments
19+
18000
USD 0
CSD23202W10 TI
TI
6000
USD 0
CSD23202W10 TI
TI
180
USD 0
CSD23202W10 TI 2149+
TI
2149+
40000
USD 0
CSD23202W10 Texas Instruments 19+
Texas Instruments
19+
18000
USD 0
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