Part Number: | BUK652R130C127 |
Product Name: | BUK652R130C127 Transistors - FETs, MOSFETs - Single |
Merchant-Specific Identifier: | BUK652R130C127 |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
Brand: | NXP USA Inc. |
Description: | MOSFET N-CH 30V 120A TO220AB |
Series: | TrenchMOS |
Packaging: | Tube |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 168nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 10918pF @ 25V |
Vgs (Max): | - |
FET Feature: | - |
Power Dissipation (Max): | 263W (Tc) |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 25A, 10V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Part Number
Brand
D/C
Qty
BUK652R1-30C,127 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
BUK652R1-30C,127 NXP USA Inc.
NXP USA Inc.
1000
USD 0
BUK652R1-30C,127 NXP USA Inc.
NXP USA Inc.
22
USD 0
BUK652R1-30C,127 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
BUK652R1-30C,127 NXP USA Inc. 19+
NXP USA Inc.
19+
13561
USD 0
BUK652R1-30C,127 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
BUK652R1-30C,127 NXP USA Inc.
NXP USA Inc.
1000
USD 0
BUK652R1-30C,127 NXP USA Inc.
NXP USA Inc.
22
USD 0
BUK652R1-30C,127 NXP USA Inc. 22+
NXP USA Inc.
22+
32000
USD 0
BUK652R1-30C,127 NXP USA Inc. 19+
NXP USA Inc.
19+
13561
USD 0