| Part Number: | BSZ014NE2LS5IFATMA1 |
| Product Name: | BSZ014NE2LS5IFATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | BSZ014NE2LS5IFATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 25V 31A 8TSDSON |
| Series: | OptiMOS |
| Packaging: | Tape & Reel (TR) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 31A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2300pF @ 12V |
| Vgs (Max): | - |
| FET Feature: | Schottky Diode (Body) |
| Power Dissipation (Max): | 2.1W (Ta), 69W (Tc) |
| Rds On (Max) @ Id, Vgs: | 1.45 mOhm @ 20A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TSDSON-8-FL |
| Package / Case: | 8-PowerTDFN |
Part Number
Brand
D/C
Qty
BSZ014NE2LS5IFATMA1 TI
TI
700
USD 0
BSZ014NE2LS5IFATMA1 TI
TI
1000
USD 0
BSZ014NE2LS5IFATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
5000
USD 0
BSZ014NE2LS5IFATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
BSZ014NE2LS5IFATMA1 TI
TI
700
USD 0
BSZ014NE2LS5IFATMA1 TI
TI
1000
USD 0
BSZ014NE2LS5IFATMA1 IR (Infineon Technologies)/original and new 23+
IR (Infineon Technologies)/original and new
23+
5000
USD 0
BSZ014NE2LS5IFATMA1 INFINEON 2024
INFINEON
2024
346000
USD 0
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