| Part Number: | BSC886N03LSGATMA1 |
| Product Name: | BSC886N03LSGATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | BSC886N03LSGATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 30V 65A TDSON-8 |
| Series: | OptiMOS |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 30V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 15V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 39W (Tc) |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 30A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TDSON-8 |
| Package / Case: | 8-PowerTDFN |
Part Number
Brand
D/C
Qty
BSC886N03LSGATMA1 TI
TI
500
USD 0
BSC886N03LSGATMA1 TI
TI
1000
USD 0
BSC886N03LSGATMA1 Infineon 21+
Infineon
21+
30000
USD 0
BSC886N03LSGATMA1
Infineon Technologies
Infineon Technologies
50
USD 0
BSC886N03LSGATMA1 TI
TI
500
USD 0
BSC886N03LSGATMA1 TI
TI
1000
USD 0
BSC886N03LSGATMA1 Infineon 21+
Infineon
21+
30000
USD 0
BSC886N03LSGATMA1
Infineon Technologies
Infineon Technologies
50
USD 0
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