| Part Number: | BSC026NE2LS5ATMA1 |
| Product Name: | BSC026NE2LS5ATMA1 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | BSC026NE2LS5ATMA1 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 25V 24A 8TDSON |
| Series: | OptiMOS |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 25V |
| Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 82A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Vgs(th) (Max) @ Id: | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 12V |
| Vgs (Max): | ±16V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.5W (Ta), 29W (Tc) |
| Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 30A, 10V |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | PG-TDSON-8 |
| Package / Case: | 8-PowerTDFN |
Part Number
Brand
D/C
Qty
BSC026NE2LS5ATMA1 INFINEON 20+
INFINEON
20+
90025
USD 0
BSC026NE2LS5ATMA1 TI
TI
1500
USD 0
BSC026NE2LS5ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
BSC026NE2LS5ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
BSC026NE2LS5ATMA1 INFINEON 20+
INFINEON
20+
90025
USD 0
BSC026NE2LS5ATMA1 TI
TI
1500
USD 0
BSC026NE2LS5ATMA1 Infineon 21+
Infineon
21+
30000
USD 0
BSC026NE2LS5ATMA1 Infineon 22+23+
Infineon
22+23+
3000
USD 0
BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
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