| Part Number: | BSB165N15NZ3 |
| Product Name: | BSB165N15NZ3 Transistors - FETs, MOSFETs - Single |
| Merchant-Specific Identifier: | BSB165N15NZ3 |
| Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| Brand: | Infineon Technologies |
| Description: | MOSFET N-CH 150V 9A WDSON-2 |
| Series: | OptiMOS |
| Packaging: | Cut Tape (CT) |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 150V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 8V, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2800pF @ 75V |
| Vgs (Max): | ±20V |
| FET Feature: | - |
| Power Dissipation (Max): | 2.8W (Ta), 78W (Tc) |
| Rds On (Max) @ Id, Vgs: | 16.5 mOhm @ 30A, 10V |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | MG-WDSON-2, CanPAK M |
| Package / Case: | 3-WDSON |
Part Number
Brand
D/C
Qty
Price (USD)
Qty
BSB165N15NZ3 G INFINEON/英飞凌 21+ 0
INFINEON/英飞凌
21+
150000
USD 0
Part Number
Brand
D/C
Qty
BSB165N15NZ3 G INFINEON
INFINEON
25000
USD 0
BSB165N15NZ3 G INFINEON
INFINEON
25000
USD 0
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