Part Number: | APTM100H80FT1G |
Product Name: | APTM100H80FT1G Transistors - FETs, MOSFETs - Arrays |
Merchant-Specific Identifier: | APTM100H80FT1G |
Category: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays |
Brand: | Microsemi Corporation |
Description: | MOSFET 4N-CH 1000V 11A SP1 |
Series: | - |
Packaging: | Bulk |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 11A |
Rds On (Max) @ Id, Vgs: | 960 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 150nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3876pF @ 25V |
Power - Max: | 208W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
Part Number
Brand
D/C
Qty
APTM100H80FT1G Microsemi Corporation
Microsemi Corporation
8000
USD 0
APTM100H80FT1G Microsemi Corporation
Microsemi Corporation
8000
USD 0
APTM100H80FT1G Microsemi Corporation 21+
Microsemi Corporation
21+
1000
USD 0
APTM100H80FT1G Microsemi Corporation 21+
Microsemi Corporation
21+
81630
USD 0
APTM100H80FT1G Microsemi Corporation 22+
Microsemi Corporation
22+
9000
USD 0
APTM100H80FT1G Microsemi Corporation
Microsemi Corporation
8000
USD 0
APTM100H80FT1G Microsemi Corporation
Microsemi Corporation
8000
USD 0
APTM100H80FT1G Microsemi Corporation 21+
Microsemi Corporation
21+
1000
USD 0
APTM100H80FT1G Microsemi Corporation 21+
Microsemi Corporation
21+
81630
USD 0
APTM100H80FT1G Microsemi Corporation 22+
Microsemi Corporation
22+
9000
USD 0